• Gun TFE electron beam source 100kV with 2 modes (High speed or High resolution)
• Laser control for the stage λ/1024 =0.62nm.
• Maximum frequency : 12MHz
• Field Stitching <20nm
• Alignment if using full correction <15nm
• Height measurement on the sample
• Sample 5x5mm to 8’’ wafers (maximum writing area on 6’’)
• Autoloader with 10 cassettes
• Ré-alignment

Positive resist

PMMA4% 950K, PMMA2% 950K, PMMA4% 200K

PMMA/MMA (for bilayer),ZEP520A or UV5-0.6)

Negative resist

XR-1541-004, Man2410 or NEB22A2

with a resolution in the resist less of 10nm.

The best resolution after a lift-off of Ni is around of 13nm.